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| PROCESS Zener Diode CPZ19 Central TM 0.5 Watt Zener Diode Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 18 X 18 MILS 7.5 MILS 11 X 11 MILS Al - 30,000A Au - 14,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 36,600 PRINCIPAL DEVICE TYPES CMPZ5235B THRU CMPZ5261B BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) Central TM PROCESS CPZ19 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) |
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